SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve the electrical property of a bottom electrode by depositing a dual bottom electrode of pillar shape made of the ruthenium and TiN film and a dielectric layer made of titanium dioxide. CONSTITUTION: A bottom electrode(200) is formed on a semiconductor substrate(100) including a lower electrode contact plug(120). The bottom electrode is formed in the pillar type. A buffer layer(210) is deposited on the surface of the bottom electrode. A dielectric film(220) is formed on the front including the buffer layer.