Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
摘要
<p>A group III nitride based high electron mobility transistor (HEMT), comprises; a semiconductor buffer layer; a high polarization semiconductor layer on said buffer layer; a semiconductor barrier layer on said high polarization layer so that said high polarization layer is sandwiched between said buffer and barrier layers, each of said layers having a non-zero total polarization pointing in the same direction, the magnitude of said polarization in said high polarization layer higher than the polarization of said buffer and barrier layers; and a two dimensional electron gas at the interface between said buffer layer and said high polarization layer.</p>
申请公布号
EP2282346(A2)
申请公布日期
2011.02.09
申请号
EP20100189898
申请日期
2002.04.11
申请人
CREE, INC.;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA