| 摘要 |
A monolithic photovoltaic cell (100) is provided. The photovoltaic cell comprises at least one junction (120, 124); said at least one junction includes a base (120) formed by an epitaxial doped semiconductor material of a first conductivity type and an emitter (124) formed by a doped semiconductor material of a second conductivity type opposed to the first. Said emitter is stacked on the base according to a first direction (x), and the base of at least one of said at least one junction has a decreasing dopant concentration gradient (C(x)) along said first direction. Said base comprises a first portion far from the emitter, a second portion proximate to the emitter, and a third portion between the first portion and the second portion. In the first portion, said decreasing dopant concentration gradient has a slope whose average value substantially ranges from - 9* 1017 cm-3/µm to -4* 1017 cm-3/µm. In the second portion, said decreasing dopant concentration gradient has a slope whose average value substantially ranges from -3* 1017 cm-3/µm to -9* 1016 cm-3/µm. In the third portion, said decreasing dopant concentration gradient has a slope whose average value substantially ranges from -2* 1017 cm-3/µm to - 5* 1016 cm-3/µm. |
