首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
摘要
申请公布号
JP4621744(B2)
申请公布日期
2011.01.26
申请号
JP20070546349
申请日期
2006.03.08
申请人
发明人
分类号
H01J49/06;G01N27/62;H01J49/26
主分类号
H01J49/06
代理机构
代理人
主权项
地址
您可能感兴趣的专利
Semiconductor light-emitting device
Semiconductor light emitting device
High-output apparatus for manufacturing a polycrystal silicon ingot for a solar cell
Method for etching multi-layer epitaxial material
Semiconductor device and method of fabricating the same
MISFET device and method of forming the same
Semiconductor device and manufacturing method thereof
Simultaneous formation of source/drain openings with different profiles
Gate to diffusion local interconnect scheme using selective replacement gate flow
Methods of fabricating semiconductor devices with electrode support patterns
Semiconductor device, semiconductor substrate, method for manufacturing semiconductor device, and method for manufacturing semiconductor substrate
Advanced transistors with punch through suppression
Vertical outgassing channels
Solid-state image pickup device
Display device and method of manufacturing the same
Thin film transistor substrate and display apparatus
Oxide semiconductor memory device
Field effect transistors including contoured channels and planar channels
Devices having inhomogeneous silicide schottky barrier contacts
X-ray obscuration film and related techniques