发明名称 |
3-D single gate inverter |
摘要 |
A 3-D (Three Dimensional) inverter having a single gate electrode. The single gate electrode has a first gate dielectric between the gate electrode and a body of a first FET (Field Effect transistor) of a first doping type, the first FET having first source/drain regions in a semiconductor substrate, or in a well in the semiconductor substrate. The single gate electrode has a second gate dielectric between the gate electrode and a body of a second FET of opposite doping to the first FET. Second source/drain regions of the second FET are formed from epitaxial layers grown over the first source/drain regions.
|
申请公布号 |
US7868391(B2) |
申请公布日期 |
2011.01.11 |
申请号 |
US20090478098 |
申请日期 |
2009.06.04 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
PAONE PHIL CHRISTOPHER FELICE;PAULSEN DAVID P.;SHEETS, II JOHN E.;WILLIAMS KELLY L. |
分类号 |
H01L29/76;H01L23/62;H01L27/01;H01L27/12;H01L29/94;H01L31/0392;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|