| 摘要 |
A semiconductor memory device includes a plurality of first wirings; a plurality of second wirings; a plurality of memory cells positioned at respective intersections of the first wirings and the second wirings, each of the memory cells having a variable resistance element and a selective element connected to the variable resistance element in series; a first selection portion selecting the first wiring; a second selection portion selecting the second wiring; and a power source portion applying predetermined selected-wiring-voltages to a selected first wiring being selected by the first selection portion and a selected second wiring being selected by the second selection portion, respectively, and applying predetermined unselected-wiring-voltages to unselected first wirings other than the selected first wiring and unselected second wirings other than the selected second wiring, respectively. A resistance element having a predetermined resistance value is provided between the power source portion and the unselected first and second wirings.
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