| 摘要 |
PURPOSE: An image sensor and a method for manufacturing thereof are provided to maximize the fill factor of an active filter by forming a transistor of unit pixel and a floating distribution area in a pixel separate well. CONSTITUTION: A first conductive semiconductor substrate(100) is provided. A pixel separate well(110) is formed with ion implantation of the first conductive dopant. The transistor of the unit pixel is formed on the pixel separate well. A photo diode(170) is formed in a light-receiving region(PDA) in order to be arranged in one side of the gate of transistor. A floating diffusion region(150) is formed inside the pixel separate well in order to be arranged in the other side of the gate.
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