| 摘要 |
PROBLEM TO BE SOLVED: To reduce the size of a multibeam semiconductor laser device to be mounted by a junction-up structure.SOLUTION: On the surface of a semiconductor substrate, a plurality of laser elements 120a-120h each having an electrode in an upper part are provided. On the laser elements 120a-120h, an insulation layer 115 having openings 118a-118h for exposing part of the electrodes thereabove is formed. A plurality of conductive layers 116a-116h are disposed separately so as to cover the surface of the insulation layer 115 including internal regions of the openings 118a-118h. Wire bonding portions are formed on surfaces of the conductive layers 116a-116h. At least one of the wire bonding portions is so formed as to be positioned above one of the plurality of laser elements 120a-120h on the surfaces of the conductive layers 116a-116h. |
