发明名称 |
Method for fabricating a charge trapping memory device |
摘要 |
A method for fabricating a charge trapping memory device includes providing a substrate; forming a first oxide layer on the substrate; forming a number of BD regions in the substrate; nitridizing the interface of the first oxide layer and the substrate via a process; forming a charge trapping layer on the first oxide layer; and forming a second oxide layer on the charge trapping layer.
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申请公布号 |
US7863132(B2) |
申请公布日期 |
2011.01.04 |
申请号 |
US20060425160 |
申请日期 |
2006.06.20 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
SHIH YEN-HAO;LU CHI-PIN;HSIEH JUNG-YU |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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