| 摘要 |
A method of testing for a leakage current between bit lines of a nonvolatile memory device includes providing the nonvolatile memory device with a page buffer having first and second bit lines coupled thereto, precharging the first bit line to a first voltage, supplying a second voltage to the second bit line, floating the second bit line and evaluating the second bit line for a set time period, and detecting a voltage level of the second bit line and outputting a test result of testing for the leakage current between the first and second bit lines by the page buffer.
|
