| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a compound semiconductor epitaxial wafer which assumes that the wafer has an in-plane temperature distribution, and further suppresses the generation of slips. SOLUTION: The manufacturing method of the compound semiconductor epitaxial wafer has a step of supplying on a substrate 11, a dopant material, a group III material, a group V material, and a diluent gas for sequentially forming the epitaxial layer. In the manufacturing method, a lowermost layer is epitaxially grown on the condition that a difference in the temperature distribution is set below 50°C between the central portion of the wafer and a wafer edge, when the epitaxial layer in the lowermost layer formed on the substrate 11 is grown. COPYRIGHT: (C)2011,JPO&INPIT
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