| 摘要 |
PROBLEM TO BE SOLVED: To provide a single crystal SiC substrate having a substrate surface flattened in a molecular level. SOLUTION: The single crystal SiC substrate 5 comprising a single crystal 4H-SiC or a single crystal 6H-SiC is housed in a fit vessel having a carbon getter effect, the inside of the fit vessel is made under saturation vapor pressure of silicon and a high temperature vacuum, and further controlled and heated to a temperature of 1,500°C or higher and 2,200°C or lower while keeping a state that the inner pressure of the fit vessel becomes higher than the external pressure. Thereby, the surface of the single crystal SiC substrate 5 is terminated in a step having a full unit height corresponding to one cycle in a deposition direction of SiC molecules that constitute the single crystal SiC substrate, or having a half unit height corresponding to a half cycle, and the surface is flattened in a molecular level. The single crystal SiC substrate produced by the above method is disposed opposing to a carbon supply feed substrate and heated while making an ultrathin melt layer of silicon be present therebetween so as to epitaxially grow a single crystal 4H-SiC in a liquid phase by a metastable solvent epitaxy method. COPYRIGHT: (C)2011,JPO&INPIT
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