DOPING FURNACE FOR SOLAR CELL WAFER

摘要

PURPOSE: A doping furnace for a solar cell wafer is provided to be used as a vacuum heat treatment apparatus using oxide gas and be used a doping treatment apparatus forming a PN junction. CONSTITUTION: A furnace frame(2) includes a process tube processing doping a solar cell wafer which is entered therein and a heater surrounding a heater. A loader station frame(3) includes a transfer apparatus loading a plurality of doped wafer which are is thermal-processed inside the process tube of the furnace frame. A source cabinet supplies oxide gas inside the process tube of the furnace frame.