| 摘要 |
Between a control terminal (gate) of an output transistor of a source follower configuration and an output terminal to which a load is coupled, a depletion transistor having a relatively lower breakdown voltage (that is, smaller device-area) is provided as a shutdown transistor of the output transistor, to thereby control a conductive state/nonconductive state of the depletion transistor. There are provided: the output transistor of the source follower configuration coupled between a first power supply line and the output terminal; the load coupled between the output terminal and a second power supply line; the depletion transistor coupled between the gate of the output transistor and the output terminal; and a control circuit controlling the conductive state/nonconductive state of the depletion transistor by applying, between a gate and a source thereof, a voltage smaller than a voltage deference between a potential of the first power supply line and a potential of the second power supply line.
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