SUBSTRATE FOR A SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE USING SAME

摘要

Disclosed is a substrate for manufacturing a semiconductor device which enhances external light extraction efficiency by increasing the packing density of a lens without limiting epitaxial layer growth, as well as a high power semiconductor device with enhanced external light extraction efficiency using the substrate. A substrate for manufacturing a semiconductor device according to the present invention is a substrate in which a plurality of convex- or concave-shaped lenses are formed, wherein the plurality of lenses are formed such that the gaps between the lenses which are arranged in a direction perpendicular to the direction in which the epitaxial layers to be formed on the substrate show good lateral growth are narrower than the gaps between the lenses which are arranged in other directions.