| 摘要 |
<P>PROBLEM TO BE SOLVED: To form an alkali (earth) metal layer of a photoelectric conversion device with high productivity. <P>SOLUTION: In manufacturing the photoelectric conversion device having a photoelectric conversion layer that includes, as a major component, a compound semiconductor having at least one type of a chalcopyrite structure formed of a group Ib element, a group IIIb element and a group VIb element, an alkali (earth) metal supply layer is film-formed by a sputtering method using a semi-conductive or conductive target that includes one or more types of alkali metals and/or alkali earth metals. Alternatively, an alkali (earth) metal supply layer is film-formed by a reactive sputtering method in the presence of oxygen and/or nitrogen using a semi-conductive or conductive target that includes one or more types of alkali metals and/or alkali earth metals. <P>COPYRIGHT: (C)2011,JPO&INPIT |
