SEMICONDUCTOR DEVICE

摘要

Provided is a semiconductor device wherein dissipation of heat generated from a semiconductor element to a supporting body is improved, while ensuring sufficient bonding strength between the semiconductor element and a supporting board. The semiconductor device is provided with: the supporting board; an electrode surface processing layer formed on the supporting board; the semiconductor element; and a solder material wherein second metal particles, which have a melting point higher than that of a first metal having Bi as a main component, are contained in the first metal, and bonds together the electrode surface processing layer and the semiconductor element. In the solder material region which corresponds to the center portion of the semiconductor element, the composition ratio of the second metal is higher than that of the first metal, and in the region outside of the region that corresponds to the center portion, the composition ratio of the first metal is higher than that of the second metal, and the composition ratio of the second metal in the region that corresponds to the center portion is 83.8 atom % or higher.