发明名称 |
SEMICONDUCTOR DEVICE, PRODUCTION METHOD OF SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC EQUIPMENT |
摘要 |
A semiconductor device includes first layer wiring including a gate electrode mounted on a substrate; a gate insulating film having an opening that exposes part of the first layer wiring and covering the entire surface of the substrate including the gate electrode; second layer wiring including a source electrode and a drain electrode mounted on the gate insulating film; an insulating partition layer having a first opening that exposes an edge between the source electrode and the drain electrode and a part of the gate insulating film between the source electrode and the drain electrode and a second opening that is aligned with the opening formed in the gate insulating film; and an organic semiconductor layer disposed across the source electrode and the drain electrode at the bottom surface of the first opening formed in the partition layer.
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申请公布号 |
US2010271353(A1) |
申请公布日期 |
2010.10.28 |
申请号 |
US20100762030 |
申请日期 |
2010.04.16 |
申请人 |
SONY CORPORATION |
发明人 |
YONEYA NOBUHIDE |
分类号 |
G06F3/038;H01L51/10;H01L51/40;H01L51/50 |
主分类号 |
G06F3/038 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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