| 摘要 |
PURPOSE: A top ring of a CMP(Chemical Mechanical Polishing) apparatus is provided to improve polishing uniformity between a central part and an edge of a wafer despite the progress of a polishing process. CONSTITUTION: A top ring(100) of a CMP(Chemical Mechanical Polishing) apparatus vacuum-sucks a wafer(W) or presses the water to a polishing pad at constant pressure by compression air. A projection(150) is projected at bottom edge of the upper ring in the direction of contacting with the wafer. Pressure between the edge of the wafer and the polishing pad is increased by the projection. |
