发明名称 |
METHOD FOR REPAIRING PIN HOLE OF PHOTOMASK USING SELF ASSEMBLY MOLECULE |
摘要 |
<p>PURPOSE: A pin hole modifying method of a photo-mask is provided to modify generated pin holes without increasing the processing time regardless of the size of the pin holes. CONSTITUTION: A pin hole modifying method of a photo-mask using a self assembled molecular layer comprises the following steps: forming a mask on a transparent substrate(200) with a light shielding pattern; detecting a pin hole(215) by performing a defect test process; forming a resist film pattern(225) exposing the transparent substrate exposed by the detected pin hole; forming a first self assembled molecular layer(235) on one end of the transparent substrate; and burying the pin hole with a second self assembled molecular layer by supplying a solution containing a light barrier material(240).</p> |
申请公布号 |
KR20100111133(A) |
申请公布日期 |
2010.10.14 |
申请号 |
KR20090029539 |
申请日期 |
2009.04.06 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
JEONG, SOO KYEONG |
分类号 |
G03F1/72;B82B3/00;G03F9/00;H01L21/027 |
主分类号 |
G03F1/72 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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