发明名称 METHOD FOR REPAIRING PIN HOLE OF PHOTOMASK USING SELF ASSEMBLY MOLECULE
摘要 <p>PURPOSE: A pin hole modifying method of a photo-mask is provided to modify generated pin holes without increasing the processing time regardless of the size of the pin holes. CONSTITUTION: A pin hole modifying method of a photo-mask using a self assembled molecular layer comprises the following steps: forming a mask on a transparent substrate(200) with a light shielding pattern; detecting a pin hole(215) by performing a defect test process; forming a resist film pattern(225) exposing the transparent substrate exposed by the detected pin hole; forming a first self assembled molecular layer(235) on one end of the transparent substrate; and burying the pin hole with a second self assembled molecular layer by supplying a solution containing a light barrier material(240).</p>
申请公布号 KR20100111133(A) 申请公布日期 2010.10.14
申请号 KR20090029539 申请日期 2009.04.06
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JEONG, SOO KYEONG
分类号 G03F1/72;B82B3/00;G03F9/00;H01L21/027 主分类号 G03F1/72
代理机构 代理人
主权项
地址
您可能感兴趣的专利