发明名称 Method and apparatus for analyzing defect data and a review system
摘要 In a process for manufacturing a semiconductor wafer, defect distribution state analysis is performed so as to facilitate identification of the defect cause including a device cause and a process cause by classifying the defect distribution state according to the defect position coordinates detected by the inspection device, into one of the distribution characteristic categories: repeated defects, clustered defects, arc-shaped regional defects, radial regional defects, line type regional defects, ring and blob type regional defects, and random defects.
申请公布号 US7813539(B2) 申请公布日期 2010.10.12
申请号 US20030672010 申请日期 2003.09.25
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 SHIBUYA HISAE;TAKAGI YUJI
分类号 G01B11/24;G06K9/00;G01B5/28;G01N21/956;G06T7/00;H01L21/02 主分类号 G01B11/24
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