| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a gas barrier film superior not only in gas barrier properties but also in oxidation resistance and transparency. SOLUTION: The gas barrier film is formed in a plasma CVD apparatus using plasma, in which an emission intensity A of 414 nm, an emission intensity B of 336 nm, an emission intensity C of 337 nm and an emission intensity D of 656 nm satisfy "2<[B/A]<20", "[C/B]<2" and "0.5<[D/B]<50", while using a raw material having an Si-H bond, a raw material having an N-H bond, and at least one of nitrogen gas, hydrogen gas and an inert gas. COPYRIGHT: (C)2011,JPO&INPIT
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