| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that prevents transistor characteristics of a semiconductor storage device having an air gap between memory cells from deteriorating, and accelerates a shrink of the semiconductor storage device, and to provide a method for manufacturing the semiconductor storage device. SOLUTION: The semiconductor storage device includes a semiconductor substrate 1, a memory cell transistor including a tunnel insulating film 2a, a charge accumulation layer 3, an inter-poly insulating film 5, and a control gate electrode 6 which are laminated in order, a select gate transistor ST, and a high-voltage type peripheral circuit transistor PT. The memory cell transistor is in contact with a first insulating film 19 formed thereabove, and has a cavity portion 20 in a region surrounded with the first insulating film 19 and memory cells. The select gate transistor ST is in contact with the first insulating film 19 and also in contact with a laminated insulating film including a second insulating film 11 having more fixed electric charges than the first insulating film 19 on a side surface on the memory cell transistor side. The peripheral circuit transistor PT is in contact with the first insulating film 19 and also in contact with a single-layer insulating film on a side surface thereof. COPYRIGHT: (C)2011,JPO&INPIT
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