发明名称 DEPOSITION DEVICE
摘要 PROBLEM TO BE SOLVED: To reliably inhibit entry of reaction gas of a rotating mechanism 7 in a deposition device that supplies a deposition chamber 1, containing a susceptor for placing a substrate with the reaction gas, and forms a film on a surface of the substrate, to whose upper end a supporting member for a susceptor is connected, and has a rotary shaft 6 extending downward through a through-hole 1c opened at the bottom wall 1a of the deposition chamber, and a rotating mechanism for the rotary shaft arranged below the deposition chamber. SOLUTION: The rotating mechanism 7 has a bearing 9 arranged with a cylinder-shaped pressing member 8 installed between the bottom surface of bottom wall 1a of the deposition chamber 1 and itself, and a drive source 10 arranged down below the bearing 9. While there are formed on the pressing member 8 an annular distribution chamber 13 and an inlet 14 for introducing a purging gas into the distribution chamber 13 from one place around its periphery, there are formed two or more nozzle holes 15 for spouting the purge gas from the distribution chamber 13 to a clearance gap between the pressing member 8 and the rotary shaft 6 by having an clearance in a circumferential direction. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010225731(A) 申请公布日期 2010.10.07
申请号 JP20090069602 申请日期 2009.03.23
申请人 NUFLARE TECHNOLOGY INC 发明人 SUZUKI KUNIHIKO;YAJIMA MASAMI;IKETANI NAOHISA
分类号 H01L21/205;C23C16/458 主分类号 H01L21/205
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