| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a Si crystal for a solar cell, which has a low density of void defects in the Si crystal, and has a high quality causing no deterioration under light irradiation, and a method for manufacturing the same. <P>SOLUTION: The Si crystal contains Ga and Ge as dope elements, and is manufactured by the Czochralski method or the cast method B may be contained as a dope element. The concentration of Ga is preferably in the range of≥2×10<SP>14</SP>atoms/cm<SP>3</SP>and≤3×10<SP>18</SP>atoms/cm<SP>3</SP>, and the concentration of Ge is preferably in the range of≥1×10<SP>15</SP>atoms/cm<SP>3</SP>and≤2×10<SP>20</SP>atoms/cm<SP>3</SP>. The density of FPD (flow pattern defects) expressed as a V-character pattern of the crystal (b) containing Ga and Ge added decreases more than that of a crystal (a) containing Ga added singly. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
