发明名称 |
Capacitive substrate and method of making same |
摘要 |
A capacitive substrate and method of making same in which first and second glass layers are used. A first conductor is formed on a first of the glass layers and a capacitive dielectric material is positioned over the conductor. The second conductor is then positioned on the capacitive dielectric and the second glass layer positioned over the second conductor. Conductive thru-holes are formed to couple to the first and second conductors, respectively, such that the conductors and capacitive dielectric material form a capacitor when the capacitive substrate is in operation.
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申请公布号 |
US7803688(B2) |
申请公布日期 |
2010.09.28 |
申请号 |
US20090380616 |
申请日期 |
2009.03.02 |
申请人 |
ENDICOTT INTERCONNECT TECHNOLOGIES, INC. |
发明人 |
DAS RABINDRA N.;EGITTO FRANK D.;LAUFFER JOHN M.;LIN HOW T.;MARKOVICH VOYA R. |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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