| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a plasma CVD device suppressing local concentration of currents flowing a substrate, reducing increase in the current density at a substrate end, preventing problems such as burn loss due to heat generating in the substrate, and forming a thin film having stable characteristics. <P>SOLUTION: The plasma CVD device is configured to form the thin film on the surface of a substrate by disposing two electrodes opposing to each other in a reaction chamber 1 into which a source gas is introduced, supplying high frequency electric power to one of the two electrodes to generate plasma, and decomposing the source gas to form the thin film on the surface of the substrate having conductivity and conveyed into between the two electrodes. In the CVD device, a conveyance roll 6 is disposed in both sides outside the two electrodes, along the conveying direction of the substrate, wherein the conveyance roll also functions as a passage to conduct a current flowing in the substrate to the reaction chamber 1 by contacting the substrate, and the conveyance roll 6 is divided into three parts in the width direction of the substrate. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
