SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Provided is a semiconductor device which has both excellent write/erase characteristics and charge storage characteristics. The semiconductor device is provided with: a semiconductor region (11); a tunnel insulating film (12) disposed on the surface of the semiconductor region; a charge storing insulating film (13), which is disposed on the surface of the tunnel insulating film and has a hafnium oxide containing a cubic crystal region; a block insulting film (14) disposed on the surface of the charge storing insulating film; and a control gate electrode (15) disposed on the surface of the block insulating film.