| 摘要 |
<P>PROBLEM TO BE SOLVED: To set a forward voltage V<SB>f</SB>to a large positive value by restraining a variation of a threshold voltage value V<SB>th</SB>, and to increase saturation output power P<SB>sat</SB>. Ž<P>SOLUTION: An epitaxial growth substrate is formed by forming a buffer layer 112, a channel layer 114, a carrier supply layer 116 and a cap layer 118 one by one in a crystalline substrate 110 by an epitaxial growth method. A GaN-based HEMT is constituted by forming a source electrode 122, a gate electrode 124 and a drain electrode 126 in the epitaxial growth substrate. The thickness t<SB>1</SB>of the cap layer is formed at least thicker than 11 nm. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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