发明名称 |
Oxygen-Rich Layers Underlying BPSG |
摘要 |
An integrated circuit structure and a method of forming the same are provided. The method includes providing a surface; performing an ionized oxygen treatment to the surface; forming an initial layer comprising silicon oxide using first process gases comprising a first oxygen-containing gas and tetraethoxysilane (TEOS); and forming a silicate glass over the initial layer. The method may further include forming a buffer layer using second process gases comprising a second oxygen-containing gas and TEOS, wherein the first and the second process gases have different oxygen-to-TEOS ratio.
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申请公布号 |
US2010221887(A1) |
申请公布日期 |
2010.09.02 |
申请号 |
US20100779810 |
申请日期 |
2010.05.13 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
JANGJIAN SHIU-KO;HUANG WAN-TING;CHIEN YU-JEN;SUN PHIL |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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