| 摘要 |
In an MRAM, a curved region (206) is formed in a bit line (202), and this curved region (206) is in bent shape, with a TMR element (203) serving as a center, in this case, in rough U shape (in the illustrated example, in roughly inverted U shape). The bit line (202) in which the curved region (206) is formed includes the TMR element (203) in a space formed by the curved region (206). Thanks to such relatively simple construction, this construction realizes a highly reliable MRAM which ensures that power is substantially saved during data writing into a memory cell while meeting requirements for further miniaturization of the device.
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