发明名称 |
ULTRA LOW POST EXPOSURE BAKE PHOTORESIST MATERIALS |
摘要 |
Polymers comprising a first methacrylate monomer having a pendent spacer between the polymer backbone and an acid-liable acetal group, a second methacrylate monomer having a pendent group including a fluorinated alkyl group and a third methacrylate monomer having a pendent hydrocarbon group. Photoresist formulations include the polymers, a photoacid generator and a casting solvent. Methods of patterning photoresist films formed from the photoresist formulations are characterized by post-exposure bakes at temperatures of about 60° C. or less.
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申请公布号 |
US2010216071(A1) |
申请公布日期 |
2010.08.26 |
申请号 |
US20090390764 |
申请日期 |
2009.02.23 |
申请人 |
GOLDFARB DARIO LEONARDO;KHOJASTEH MAHMOUD;VARANASI PUSHKARA R |
发明人 |
GOLDFARB DARIO LEONARDO;KHOJASTEH MAHMOUD;VARANASI PUSHKARA R. |
分类号 |
G03F7/004;C08F18/20;G03F7/20 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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