发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A memory string comprises: a pair of columnar portions; a first insulating layer surrounding a side surface of the columnar portions; a charge storage layer surrounding a side surface of the first insulating layer; a second insulating layer surrounding a side surface of the charge storage layer; and a first conductive layer surrounding a side surface of the second insulating layer. A select transistor comprises: a second semiconductor layer extending from an upper surface of the columnar portions; a third insulating layer surrounding a side surface of the second semiconductor layer; a fourth insulating layer surrounding a side surface of the third insulating layer; and a second conductive layer surrounding a side surface of the fourth insulating layer. The first semiconductor layer is formed continuously in an integrated manner with the second semiconductor layer. The first insulating layer is formed continuously in an integrated manner with the third insulating layer.
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申请公布号 |
US2010213537(A1) |
申请公布日期 |
2010.08.26 |
申请号 |
US20100708161 |
申请日期 |
2010.02.18 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
FUKUZUMI YOSHIAKI;KATSUMATA RYOTA;KITO MASARU;KIDOH MASARU;TANAKA HIROYASU;ISHIDUKI MEGUMI;KOMORI YOSUKE;AOCHI HIDEAKI |
分类号 |
H01L29/792;H01L21/8239 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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