NONVOLATILE MEMORY DEVICES AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A nonvolatile memory device and a manufacturing method thereof are provided to stably supply a voltage to a gate electrode by forming a metal liner pattern on the part of the surface of gate electrodes including a silicide layer. CONSTITUTION: A gate electrode(170G) is three-dimensionally arranged on a semiconductor substrate(100). A semiconductor pattern(133) crosses one sidewall of the gate electrode. A metal liner pattern(162) is formed between the semiconductor pattern and the gate electrode. The metal liner pattern is extended to the upper side and the lower side of the gate electrode. A charge storage layer(150) is formed between the semiconductor pattern and the metal liner pattern.