发明名称 POWER SEMICONDUCTOR MODULE
摘要 <P>PROBLEM TO BE SOLVED: To reduce energy loss due to reverse recovery current of a reflux diode and to raise rated voltage in a power semiconductor module of a power conversion circuit used for alternating-direct current exchange or the like. <P>SOLUTION: The power semiconductor module used in a power conversion circuit includes a base plate, two sets of circuits which are mounted to the base plate and include a switching element and a Schottky barrier diode comprising SiC connected in reverse parallel to the switching element, an electric conductor for mutually connecting the two sets of circuits, a positive electrode side power source connection terminal for connecting one of the two sets of circuits to the positive electrode side of the power source, a negative electrode side power source connection terminal for connecting the other of the two sets of circuits to the negative electrode side of the power source, and a housing for surrounding the two sets of circuits. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010183840(A) 申请公布日期 2010.08.19
申请号 JP20100123538 申请日期 2010.05.28
申请人 MITSUBISHI ELECTRIC CORP 发明人 KINOUCHI SHINICHI;MUTO HIROTAKA;OKUDA TATSUYA
分类号 H02M7/48 主分类号 H02M7/48
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