发明名称 |
METHOD AND SYSTEM FOR REMOVAL OF A SURFACE LAYER OF A SILICON SOLAR CELL SUBSTRATE |
摘要 |
<p>A method of manufacturing a solar cell from a silicon wafer includes -formation of a dopant containing silicon layer, based on doping with dopant from a diffusion source, on at least one side of the silicon wafer, by exposing the at least one side of the silicon wafer to a dopant containing substance from the diffusion source, the dopant containing silicon layer comprising an upper layer of an ineffective conductive silicon layer having a relatively high concentration of dopant and a lower buried layer of a conductive silicon layer having a lower concentration of dopant, -back-etching of the dopant containing silicon layer by a back-etch etchant, the back- etch etchant having a first component and a second component, the back-etching comprising an oxidation reaction to transform a top layer of the dopant containing silicon layer into an oxide top layer by the first component and a dissolution reaction to remove the oxide top layer by the second component; the dissolution reaction being rate-limiting in the back-etch process.</p> |
申请公布号 |
WO2010093238(A1) |
申请公布日期 |
2010.08.19 |
申请号 |
WO2010NL50061 |
申请日期 |
2010.02.10 |
申请人 |
STICHTING ENERGIEONDERZOEK CENTRUM NEDERLAND;WYERS, GERARD PAUL;KOPPES, MARTIEN;STASSEN, ARNO FERDINAND |
发明人 |
WYERS, GERARD PAUL;KOPPES, MARTIEN;STASSEN, ARNO FERDINAND |
分类号 |
H01L31/18 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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