| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device that can reduce blocking of incident light by a peripheral edge of a light reception unit, and can make larger in the angle of view and faster in driving speed. SOLUTION: A single-layer transfer electrode structure is employed which has a first transfer electrode 3a and a second transfer electrode 3b formed on one layer of polysilicon. On the first transfer electrode 3a coupled in a horizontal direction, two shunt interconnects 4a, 4b are formed which extend in the horizontal direction, and connected to the first transfer electrode 3a and second transfer electrode 3b on a transfer channel 2. Through the shunt interconnects 4a, 4b of low resistance extending in the horizontal direction, for example, four-phase transfer pulsesϕV1 toϕV4 are supplied to the first transfer electrode 3a and second transfer electrode 3b on the transfer channel. COPYRIGHT: (C)2010,JPO&INPIT
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