| 摘要 |
<p>The present invention relates to a method for producing a CdS thin film having an elemental sulphur vacancy defect, and, more specifically, it relates to a method for producing a CdS thin film having an elemental sulphur vacancy defect produced using a solution in which the molar ratio of a Cd ion source/S ion source is greater than 1 and smaller than 5 by means of the chemical solution growth method (chemical bath deposition). The present invention makes it possible to produce, in a straightforward process and in an economic fashion, high-quality CdS thin films having outstanding light sensitivity characteristics across the entire wavelength region of visible light by inducing elemental sulphur vacancy defects within the thin film.</p> |
