| 摘要 |
PROBLEM TO BE SOLVED: To provide a flame-free wet oxidation of a semiconductor wafer. SOLUTION: Water for use in wet oxidation of semiconductor surfaces may be generated by reacting ultrapure hydrogen and ultrapure oxygen without generating a flame. Since no flame is used, contamination problem due to a flame impinging on quartz components of a "torch" is not caused. Flame-free generation of water is accomplished by reacting hydrogen and oxygen under conditions that do not result in ignition. This may be accomplished by providing a diluted hydrogen stream in which molecular hydrogen is mixed with a diluent such as a noble gas or nitrogen. This use of diluted hydrogen also reduces or eliminates the danger of explosion. This can simplify the apparatus design by eliminating the need for complicated interlocks, flame detectors, etc. COPYRIGHT: (C)2010,JPO&INPIT |
