SEMICONDUCTOR EMBEDDED RESISTOR GENERATION

摘要

A method for generating an embedded resistor in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including forming a shallow trench isolation (STI) region in a substrate; forming a pad oxide on the STI region and substrate; depositing a silicon layer on the pad oxide; forming a photo-resist mask on a portion of the silicon layer disposed substantially above the STI region.; etching the silicon layer to yield a polyconductor (PC) disposed substantially above the STI region; oxidizing the PC; depositing at least one of an oxide material or a metal gate material on the oxidized surface; depositing a silicon layer on the at least one oxide material or metal gate material; depositing additional silicon on a portion of the silicon layer disposed substantially above the STI region; patterning a transistor gate with a photo-resist mask disposed on another portion of the silicon layer disposed substantially away from the STI region; and etching the silicon layer to yield at least one transistor structure disposed substantially away from the STI region and at least one resistor structure disposed substantially above the STI region.