发明名称 |
SOLID-STATE IMAGE SENSING DEVICE CONTAINING ELECTRON MULTIPLICATION FUNCTION |
摘要 |
Disclosed is a solid-state image sensing device containing an electron multiplication function, which is comprised of an imaging area (VR) composed of a plurality of vertical shift registers; a horizontal shift register (HR) which transfers electrons from the imaging area (VR); a multiplication register (EM) which multiplies electrons transferred from the horizontal shift register (HR); and an electron injecting electrode (11A) provided in an end portion on the side of the starting point in the electron transfer direction of the imaging area (VR). A specific vertical shift register (a channel (CH1)) to which electrons are injected by the electron injecting electrode (11A) is positioned in a thick plate portion of a semiconductor substrate, and is protected from incident light. |
申请公布号 |
WO2010087367(A1) |
申请公布日期 |
2010.08.05 |
申请号 |
WO2010JP51038 |
申请日期 |
2010.01.27 |
申请人 |
HAMAMATSU PHOTONICS K.K.;SUZUKI HISANORI;YONETA YASUHITO;TAKAGI SHIN-ICHIRO;MAETA KENTARO;MURAMATSU MASAHARU |
发明人 |
SUZUKI HISANORI;YONETA YASUHITO;TAKAGI SHIN-ICHIRO;MAETA KENTARO;MURAMATSU MASAHARU |
分类号 |
H01L27/148;H04N5/335;H04N5/341;H04N5/369;H04N5/3725;H04N5/3728;H04N5/374 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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