| 摘要 |
PURPOSE: A floating body grounded-gate n-type metal-oxide-semiconductor(GGNMOS) with an electrostatic-discharge protective function is provided to improve the performance of an electrostatic-discharge protective circuit by increasing a second trigger current. CONSTITUTION: A substrate trigger voltage is generated in a trigger voltage reducing unit(M2) by floating the body of an NMOS. An electrostatic-discharge protective unit(M1) discharges static electricity by obtaining a gate trigger voltage and a substrate trigger voltage. A first pad(16) is a power voltage pad. A second pad(17) is a ground voltage pad.
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