| 摘要 |
Provided is a semiconductor device having a high switching speed. A semiconductor device (20) is provided with an n-type epitaxial layer (2) having a plurality of trenches (3) arranged at prescribed intervals (b); an embedded electrode (5) formed on an inner surface of the trench (3) through a silicon oxide film (4) to embed each trench (3); and a metal layer (7), which is capacitively coupled with the embedded electrode (5) by being arranged above the embedded electrode (5) through a silicon oxide film (6). In the semiconductor device (20), a region between the adjacent trenches (3) operates as a channel (current path)(11). A current flowing in the channel (11) is interrupted by covering the region with a depletion layer formed at the periphery of the trenches (3), and the current is permitted to flow through the channel (11) by eliminating the depletion layer at the periphery of the trenches (3).
|
