SYSTEM AND METHOD TO READ AND WRITE DATA AT A MAGNETIC TUNNEL JUNCTION ELEMENT

摘要

A system and method to read and write data in magnetic random access memories are disclosed. In a particular embodiment, a device (100) includes a spin transfer torque magnetic tunnel junction (STT-MT J) element (102) and a transistor (104) with a first gate (106) and a second gate (108) coupled to the STT-MTJ element.