FABRICATING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICES

摘要

PURPOSE: A method for fabricating a semiconductor integrated circuit device is provided to prevent the damage of a layer to be etched by forming a sacrificial layer on an intermediate mask pattern and simultaneously etching the sacrificial layer and a first pattern. CONSTITUTION: A layer to be etched(110a), a first layer, and a second layer are successively formed on a substrate(100a). A first etching mask including a plurality of first line patterns, which is spaced apart in a first pitch, on the first layer and the second layer. The second layer and the first layer are successively etched using the first etching mask in order to form an intermediate mask pattern(142a) including second patterns(132a, 132b) and first patterns(121a, 121b). Second etching masks(320a, 320b) including a plurality of second line patterns, which is spaced apart in a second pitch, are formed on the intermediated mask pattern.