LOGIC CIRCUIT DEVICE HAVING STACKED SEMICONDUCTOR OXIDE TRANSISTORS

摘要

PURPOSE: A logical circuit device including stacked semiconductor oxide transistors is provided to convert transistors from a depletion mode to an enhancement mode by regulating a threshold voltage between transistors. CONSTITUTION: A first semiconductor oxide transistor includes a first semiconductor oxide channel layer(CH1). A second semiconductor transistor includes a second semiconductor oxide channel layer(CH2). A body gate(V_body) is located between the first transistor and the second transistor. A negative voltage is applied to the body gate, and the threshold voltages of the first transistor and the second transistor are transferred toward a positive direction. A first gate oxide(GOX1) is formed between the body gate and the first channel layer. A second gate oxide(GOX2) is formed between the body gate and the second channel layer.