发明名称 Plasma processing apparatus and plasma processing method
摘要 A plasma processing apparatus comprising at least a plasma processing chamber for plasma-processing an object; object-holding means for disposing the object in the plasma processing chamber; and plasma-generating means for generating a plasma in the plasma processing chamber. The inner wall of the plasma processing chamber is at least partially covered with an oxide film based on a pre-treating plasma. A plasma processing apparatus and a plasma processing method effectively prevent the spluttering and the etching of the inner wall of the plasma processing chamber while suppressing contamination to the object.
申请公布号 US7754995(B2) 申请公布日期 2010.07.13
申请号 US20050535856 申请日期 2005.05.20
申请人 TOKYO ELECTRON LIMITED 发明人 NOZAWA TOSHIHISA;SASAKI MASARU;INOUE MASAJI
分类号 B23K10/00;C23C8/00;C23C16/44;H01J37/32;H01L21/205 主分类号 B23K10/00
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