发明名称 |
Plasma processing apparatus and plasma processing method |
摘要 |
A plasma processing apparatus comprising at least a plasma processing chamber for plasma-processing an object; object-holding means for disposing the object in the plasma processing chamber; and plasma-generating means for generating a plasma in the plasma processing chamber. The inner wall of the plasma processing chamber is at least partially covered with an oxide film based on a pre-treating plasma. A plasma processing apparatus and a plasma processing method effectively prevent the spluttering and the etching of the inner wall of the plasma processing chamber while suppressing contamination to the object.
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申请公布号 |
US7754995(B2) |
申请公布日期 |
2010.07.13 |
申请号 |
US20050535856 |
申请日期 |
2005.05.20 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
NOZAWA TOSHIHISA;SASAKI MASARU;INOUE MASAJI |
分类号 |
B23K10/00;C23C8/00;C23C16/44;H01J37/32;H01L21/205 |
主分类号 |
B23K10/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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