THE METHOD FOR REDUCING A LEAKAGE CURRENT OF THE NITRIDE COMPOUND SEMICONDUCTOR DEVICE,申请号KR20080017069-传众专利搜索

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发明名称	THE METHOD FOR REDUCING A LEAKAGE CURRENT OF THE NITRIDE COMPOUND SEMICONDUCTOR DEVICE
摘要
申请公布号	KR100969608(B1)	申请公布日期	2010.07.12
申请号	KR20080017069	申请日期	2008.02.26
申请人		发明人
分类号	H01L21/336;H01L21/20;H01L21/324	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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