| 摘要 |
<p>PURPOSE: A manufacturing method of the semiconductor device practices the electrostatic force cancel release step condition wafer the dechucking in -20% to the allowed value of a +20%. The stabilization of the RC resistance can be secured. CONSTITUTION: A gate insulating layer(140) and gate electrode(160) are formed in the active area of the semiconductor substrate(100) in which the element isolation film(120) is formed in order to define the active area. The spacer(180) is formed in the side wall of the gate electrode. The oxide film(200) is formed in the semiconductor substrate front board including the gate electrode. The photoresist pattern for defining the salicide region is formed on the oxide film. The oxide film is etched by using the photoresist pattern as mask. After the oxide film is etched, the electrostatic force cancel release process is enforced.</p> |
