| 摘要 |
PURPOSE: A device isolating film forming method of a semiconductor device is provided to prevent the exposure of an inter-layer insulating film by forming a liner oxide with different thickness according to pattern density of a cell region and a peripheral circuit region. CONSTITUTION: An inter-layer insulating film(102), a conductive film(104), and a hard mask film are formed on a semiconductor substrate(100). The hard mask film, a conductive film, an inter-layer insulating film, and a semiconductor substrate are etched so that a trench is formed. A liner oxide(150) is formed on the front side of the semiconductor substrate including the inner wall of the trench. An element isolation film(106) is formed in the area in which the trench is formed. The top of the element isolation film is etched.
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